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Plasma enhanced chemical vapor deposition of excellent a-Si:H passivation layers for a-Si:H/c-Si heterojunctionsolar cells at high pressure and high power

Lei ZHAO,Wenbin ZHANG,Jingwei CHEN,Hongwei DIAO,Qi WANG,Wenjing WANG

《能源前沿（英文）》 2017年 第11卷 第1期   页码 85-91 doi: 10.1007/s11708-016-0437-3

摘要： The intrinsic a-Si:H passivation layer inserted between the doped a-Si:H layer and the c-Si substrate is very crucial for improving the performance of the a-Si:H/c-Si heterojunction (SHJ) solar cell. The passivation performance of the a-Si:H layer is strongly dependent on its microstructure. Usually, the compact a-Si:H deposited near the transition from the amorphous phase to the nanocrystalline phase by plasma enhanced chemical vapor deposition (PECVD) can provide excellent passivation. However, at the low deposition pressure and low deposition power, such an a-Si:H layer can be only prepared in a narrow region. The deposition condition must be controlled very carefully. In this paper, intrinsic a-Si:H layers were prepared on n-type Cz c-Si substrates by 27.12 MHz PECVD at a high deposition pressure and high deposition power. The corresponding passivation performance on c-Si was investigated by minority carrier lifetime measurement. It was found that an excellent a-Si:H passivation layer could be obtained in a very wide deposition pressure and power region. Such wide process window would be very beneficial for improving the uniformity and the yield for the solar cell fabrication. The a-Si:H layer microstructure was further investigated by Raman and Fourier transform infrared (FTIR) spectroscopy characterization. The correlation between the microstructure and the passivation performance was revealed. According to the above findings, the a-Si:H passivation performance was optimized more elaborately. Finally, a large-area SHJ solar cell with an efficiency of 22.25% was fabricated on the commercial 156 mm pseudo-square n-type Cz c-Si substrate with the open-circuit voltage ( ) of up to 0.732 V.

关键词： PECVD     high pressure and high power     a-Si:H microstructure     passivation     heterojunction solar cell    

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Analysis of the double-layer α-Si:H emitter with different doping concentrations for α-Si:H/c-Si heterojunctionsolar cells

Haibin HUANG,Gangyu TIAN,Tao WANG,Chao GAO,Jiren YUAN,Zhihao YUE,Lang ZHOU

《能源前沿（英文）》 2017年 第11卷 第1期   页码 92-95 doi: 10.1007/s11708-016-0432-8

摘要： Double-layer emitters with different doping concentrations (DLE) have been designed and prepared for amorphous silicon/crystalline silicon (α-Si:H/c-Si) heterojunction solar cells. Compared with the traditional single layer emitter, both the experiment and the simulation (AFORS-HET, http://www.paper.edu.cn/html/releasepaper/2014/04/282/) prove that the double-layer emitter increases the short circuit current of the cells significantly. Based on the quantum efficiency (QE) results and the current-voltage-temperature analysis, the mechanism for the experimental results above has been investigated. The possible reasons for the increased current include the enhancement of the QE in the short wavelength range, the increase of the tunneling probability of the current transport and the decrease of the activation energy of the emitter layers.

关键词： double-layer emitter     α-Si:H/c-Si heterojunction solar cell     short circuit current     quantum efficiency     current-voltage-temperature    

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An industrial solution to light-induced degradation of crystalline silicon solar cells

Meng XIE,Changrui REN,Liming FU,Xiaodong QIU,Xuegong YU,Deren YANG

《能源前沿（英文）》 2017年 第11卷 第1期   页码 67-71 doi: 10.1007/s11708-016-0430-x

摘要： Boron-oxygen defects can cause serious light-induced degradation (LID) of commercial solar cells based on the boron-doped crystalline silicon (c-Si), which are formed under the injection of excess carriers induced either by illumination or applying forward bias. In this contribution, we have demonstrated that the passivation process of boron-oxygen defects can be induced by applying forward bias for a large quantity of solar cells, which is much more economic than light illumination. We have used this strategy to trigger the passivation process of batches of aluminum back surface field (Al-BSF) solar cells and passivated emitter and rear contact (PERC) solar cells. Both kinds of the treated solar cells show high stability in efficiency and suffer from very little LID under further illumination at room temperature. This technology is of significance for the suppression of LID of c-Si solar cells for the industrial manufacture.

关键词： Boron-oxygen defects     c-Si solar cells     light-induced degradation     passivation     forward bias    

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Ultrathin microcrystalline hydrogenated Si/Ge alloyed tandem solar cells towards full solar spectrum

Yu Cao, Xinyun Zhu, Xingyu Tong, Jing Zhou, Jian Ni, Jianjun Zhang, Jinbo Pang

《化学科学与工程前沿（英文）》 2020年 第14卷 第6期   页码 997-1005 doi: 10.1007/s11705-019-1906-0

摘要： Thin film solar cells have been proved the next generation photovoltaic devices due to their low cost, less material consumption and easy mass production. Among them, micro-crystalline Si and Ge based thin film solar cells have advantages of high efficiency and ultrathin absorber layers. Yet individual junction devices are limited in photoelectric conversion efficiency because of the restricted solar spectrum range for its specific absorber. In this work, we designed and simulated a multi-junction solar cell with its four sub-cells selectively absorbing the full solar spectrum including the ultraviolet, green, red as well as near infrared range, respectively. By tuning the Ge content, the record efficiency of 24.80% has been realized with the typical quadruple junction structure of a-Si:H/a-Si Ge :H/µc-Si:H/µc-Si Ge :H. To further reduce the material cost, thickness dependent device performances have been conducted. It can be found that the design of total thickness of 4 m is the optimal device design in balancing the thickness and the . While the design of ultrathin quadruple junction device with total thickness of 2 m is the optimized device design regarding cost and long-term stability with a little bit more reduction in . These results indicated that our solar cells combine the advantages of low cost and high stability. Our work may provide a general guidance rule of utilizing the full solar spectrum for developing high efficiency and ultrathin multi-junction solar cells.

关键词： thin films     solar cells     quadruple junction solar cell     amorphous silicon     silicon germanium alloy     quantum efficiency    

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Plated contacts for solar cells with superior adhesion strength to screen printed solar cells

WENHAM,C. CHONG

《能源前沿（英文）》 2017年 第11卷 第1期   页码 72-77 doi: 10.1007/s11708-016-0428-4

摘要： The improvement of adhesion strength and durability of plated contacts is required for cell manufacturers to gain confidence for large-scale manufacturing. To overcome weak adhesion at the metal/Si interface, new approaches were developed. These involve the formation of laser-ablated anchor points, or grooves in the extreme case of overlapping anchor points, in the heavily doped silicon surface. When plated, these features greatly strengthen the mechanical adhesion strength of the metal. A stylus-based adhesion tester was developed specifically for evaluating the effectiveness of plated contacts to smooth silicon surfaces. The use of such a tester was also extended in this work to textured and roughened surfaces to allow evaluation of different metal contacting approaches. The adhesion strengths for various metal contacting schemes were evaluated, including screen-printed silver contacts, nickel/copper (Ni/Cu) light-induced plated (LIP) contacts for laser-doped selective emitter (LDSE) cells, buried-contact solar cells (BCSCs), and Ni/Cu LIP contacts formed with laser-ablated anchoring points in selective emitter (LAASE) cells. The latter has superior adhesion strength. The standard “peel test” of the industry was compared to the stylus-based adhesion testing, with the latter shown value for testing metal contacts on smooth surfaces but with caution needed for use with textured or roughened surfaces.

关键词： light-induced plating     metal adhesion strength     copper plating     metal contacts     solar cell durability     silicon solar cells    

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Enhanced charge extraction for all-inorganic perovskite solar cells by graphene oxide quantum dots modified

《化学科学与工程前沿（英文）》 2023年 第17卷 第5期   页码 516-524 doi: 10.1007/s11705-022-2238-z

摘要： All-inorganic cesium lead bromide (CsPbBr3) perovskite solar cells have been attracting growing interest due to superior performance stability and low cost. However, low light absorbance and large charge recombination at TiO2/CsPbBr3 interface or within CsPbBr3 film still prevent further performance improvement. Herein, we report devices with high power conversion efficiency (9.16%) by introducing graphene oxide quantum dots (GOQDs) between TiO2 and perovskite layers. The recombination of interfacial radiation can be effectively restrained due to enhanced charge transfer capability. GOQDs with C-rich active sites can involve in crystallization and fill within the CsPbBr3 perovskite film as functional semiconductor additives. This work provides a promising strategy to optimize the crystallization process and boost charge extraction at the surface/interface optoelectronic properties of perovskites for high efficient and low-cost solar cells.

关键词： all inorganic     perovskite solar cells     graphene oxide quantum dots     high performance     stability    

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phosphonic acid anchoring groups aiming toward enhancing the stability and efficiency of mesoscopic solarcells

《化学科学与工程前沿（英文）》 2022年 第16卷 第7期   页码 1060-1078 doi: 10.1007/s11705-021-2117-z

摘要： Novel near-infrared sensitizers with different anchoring groups aiming toward improved stability and efficiency of dye-sensitized solar cells were synthesized. Adsorption of these dyes on the mesoporous TiO2 surface revealed the dye adsorption rate of –CH=CH–COOH (SQ-139)>–CH=C(CN)COOH (SQ-140)>–PO3H2 (SQ-143)>–CH=C(CN)PO3H2 (SQ-148)>–CH=C(CN)PO3H–C2H5 (SQ-157)>–PO3H–C2H5 (SQ-151)>–CH=CH–COOH(–PO3H2) (SQ-162). The binding strength of these dyes on mesoporous TiO2 as investigated by dye desorption studies follows SQ-162>SQ-143>SQ-148>SQ-139>SQ-157~SQ-151>SQ-140 order. The acrylic acid anchoring group was demonstrated to be an optimum functional group owing to its fast dye adsorption rate and better binding strength on TiO2 along with good photoconversion efficiency. Results of dye binding on TiO2 surface demonstrated that SQ-162 bearing double anchoring groups of phosphonic and acrylic acid exhibited>550 times stronger binding as compared to dye SQ-140 having cyanoacrylic acid anchoring group. SQ-140 exhibited the best photovoltaic performance with photon harvesting mainly in the far-red to near-infrared wavelength region having short circuit current density, open-circuit voltage and fill factor of 14.28 mA·cm–2, 0.64 V and 0.65, respectively, giving the power conversion efficiency of 5.95%. Thus, dye SQ-162 not only solved the problem of very poor efficiency of dye bearing only phosphonic acid while maintaining the extremely high binding strength opening the path for the design and development of novel near-infrared dyes with improved efficiency and stability by further increasing the π-conjugation.

关键词： anchoring groups     adsorption behaviour     dye-binding strength     squaraine dyes     dye-sensitized solar cells    

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A state-of-the-art review of solar passive building system for heating or cooling purpose

Arun Kumar NANDA,C K PANIGRAHI

《能源前沿（英文）》 2016年 第10卷 第3期   页码 347-354 doi: 10.1007/s11708-016-0403-0

摘要： The major portion of energy in a building is consumed by heating, ventilating, and air-conditioning (HVAC). The traditional heating and cooling systems contribute greatly to the emission of greenhouse gases, especially carbon dioxide. Four different ways, i.e., Trombe wall, solar chimney, unglazed transpired solar façade, and solar roof, are adopted for solar heating. Similarly, two major ways, i.e., evaporative cooling and building integrated evaporative cooling are adopted for cooling of the building. Therefore, an attempt has been made in this paper to compile the developments of solar heating and cooling technologies in a building.

关键词： HVAC     heating     cooling     solar heating     carbon dioxide (CO2) emissions    

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Enhancement of open circuit voltage in organic solar cells by doping a fluorescent red dye

Qing LI, Junsheng YU, Yue ZANG, Nana WANG, Yadong JIANG

《能源前沿（英文）》 2012年 第6卷 第2期   页码 179-183 doi: 10.1007/s11708-012-0177-y

摘要： The open circuit voltage ( ) of small-molecule organic solar cells (OSCs) could be improved by doping suitable fluorescent dyes into the donor layers. In this paper, 4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB) was used as a dopant, and the performance of the OSCs with different DCJTB concentration in copper phthalocyanine (CuPc) was studied. The results showed that the of the OSC with 50% of DCJTB in CuPc increased by 15%, compared with that of the standard CuPc/fullerene (C ) device. The enhancement of the was attributed to the lower highest occupied molecular orbital (HOMO) level in the DCJTB than that in the CuPc. Also, the light absorption intensity is enhanced between 400 and 550 nm, where CuPc and C have low absorbance, leading to a broad absorption spectrum.

关键词： organic solar cells (OSCs)     open circuit voltage     fluorescent dye doping     4-(dicyanomethylene)-2-t-butyl-6-(1     1     7     7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB)    

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Ga(X)N/Si nanoarchitecture: An emerging semiconductor platform for sunlight-powered water splitting toward

《能源前沿（英文）》 doi: 10.1007/s11708-023-0881-9

摘要： Sunlight-powered water splitting presents a promising strategy for converting intermittent and virtually unlimited solar energy into energy-dense and storable green hydrogen. Since the pioneering discovery by Honda and Fujishima, considerable efforts have been made in this research area. Among various materials developed, Ga(X)N/Si (X = In, Ge, Mg, etc.) nanoarchitecture has emerged as a disruptive semiconductor platform to split water toward hydrogen by sunlight. This paper introduces the characteristics, properties, and growth/synthesis/fabrication methods of Ga(X)N/Si nanoarchitecture, primarily focusing on explaining the suitability as an ideal platform for sunlight-powered water splitting toward green hydrogen fuel. In addition, it exclusively summarizes the recent progress and development of Ga(X)N/Si nanoarchitecture for photocatalytic and photoelectrochemical water splitting. Moreover, it describes the challenges and prospects of artificial photosynthesis integrated device and system using Ga(X)N/Si nanoarchitectures for solar water splitting toward hydrogen.

关键词： Ga(X)N/Si nanoarchitecture     artificial photosynthesis     water splitting     solar toward hydrogen    

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Design and analysis of Salisbury screens and Jaumann absorbers for solar radiation absorption

Xing FANG, C. Y. ZHAO, Hua BAO

《能源前沿（英文）》 2018年 第12卷 第1期   页码 158-168 doi: 10.1007/s11708-018-0542-6

摘要： Two types of resonance absorbers, i.e., Salisbury screens and Jaumann absorbers are systematically investigated in solar radiation absorption. Salisbury screen is a metal-dielectric-metal structure which overcomes the drawback of bulky thickness for solar spectrum. Such structures have a good spectral selective absorption property, which is also insensitive to incident angles and polarizations. To further broaden absorption bandwidth, more metal and dielectric films are taken in the structure to form Jaumann absorbers. To design optimized structural parameters, the admittance matching equations have been derived in this paper to give good initial structures, which are valuable for the following optimization. Moreover, the analysis of admittance loci has been conducted to directly show the effect of each layer on the spectral absorptivity, and then the effect of thin films is well understood. Since the fabrication of these layered absorbers is much easier than that of other nanostructured absorbers, Salisbury screen and Jaumann absorbers have a great potential in large-area applications.

关键词： thin films     admittance loci     solar absorber    

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Special issue: Technologies for future high-efficiency industrial silicon wafer solar cells

《能源前沿（英文）》 2017年 第11卷 第1期   页码 1-3 doi: 10.1007/s11708-016-0436-4

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High-quality industrial n-type silicon wafers with an efficiency of over 23% for Si heterojunction solarcells

Fanying MENG,Jinning LIU,Leilei SHEN,Jianhua SHI,Anjun HAN,Liping ZHANG,Yucheng LIU,Jian YU,Junkai ZHANG,Rui ZHOU,Zhengxin LIU

《能源前沿（英文）》 2017年 第11卷 第1期   页码 78-84 doi: 10.1007/s11708-016-0435-5

摘要： n-type CZ-Si wafers featuring longer minority carrier lifetime and higher tolerance of certain metal contamination can offer one of the best Si-based solar cells. In this study, Si heterojuction (SHJ) solar cells which was fabricated with different wafers in the top, middle and tail positions of the ingot, exhibited a stable high efficiency of>22% in spite of the various profiles of the resistivity and lifetime, which demonstrated the high material utilization of n-type ingot. In addition, for effectively converting the sunlight into electrical power, the pyramid size, pyramid density and roughness of surface of the Cz-Si wafer were investigated by scanning electron microscope (SEM) and transmission electron microscope (TEM). Furthermore, the dependence of SHJ solar cell open-circuit voltage on the surface topography was discussed, which indicated that the uniformity of surface pyramid helps to improve the open-circuit voltage and conversion efficiency. Moreover, the simulation revealed that the highest efficiency of the SHJ solar cell could be achieved by the wafer with a thickness of 100 µm. Fortunately, over 23% of the conversion efficiency of the SHJ solar cell with a wafer thickness of 100 µm was obtained based on the systematic optimization of cell fabrication process in the pilot production line. Evidently, the large availability of both n-type ingot and thinner wafer strongly supported the lower cost fabrication of high efficiency SHJ solar cell.

关键词： n-type Cz-Si     thinner wafer     surface texture     high efficiency     SHJ solar cell    

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POCl3 diffusion for industrial Si solar cell emitter formation

Hongzhao LI,Kyung KIM,Brett HALLAM,Bram HOEX,Stuart WENHAM,Malcolm ABBOTT

《能源前沿（英文）》 2017年 第11卷 第1期   页码 42-51 doi: 10.1007/s11708-016-0433-7

摘要： POCl diffusion is currently the standard method for industrial n-type emitter fabrication. In this study, we present the impact of the following processing parameters on emitter formation and electrical performance: deposition gas flow ratio, drive-in temperature and duration, drive-in O flow rate, and thermal oxidation temperature. By showing their influence on the emitter doping profile and recombination activity, we provide an overall strategy for improving industrial POCl tube diffused emitters.

关键词： POCl3 diffusion     emitter recombination     oxidation     silicon    

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Charge-carrier photogeneration and extraction dynamics of polymer solar cells probed by a transient photocurrent

Boa Jin, Hyunmin Park, Yang Liu, Leijing Liu, Jongdeok An, Wenjing Tian, Chan Im

《化学科学与工程前沿（英文）》 2021年 第15卷 第1期   页码 164-179 doi: 10.1007/s11705-020-1976-z

摘要： To understand the complex behaviors of photogenerated charge carriers within polymer-based bulk-heterojunction-type solar cells, the charge-carrier photogeneration and extraction dynamics are simultaneously estimated using a transient photocurrent technique under various external-bias voltages, and a wide range of excitation intensities are analyzed. For this purpose, conventional devices with 80 nm thick active layers consisting of a blend of representative P3HT and PTB7 electron-donating polymers and proper electron-accepting fullerene derivatives were used. After the correction for the saturation behavior at a high excitation-intensity range nearby the regime of the space charge-limited current, the incident-photon-density-dependent maximum photocurrent densities at the initial peaks are discussed as the proportional measures of the charge-carrier-photogeneration facility. By comparing the total number of the extracted charge carriers to the total number of the incident photons and the number of the initially photogenerated charge carriers, the external quantum efficiencies as well as the extraction quantum efficiencies of the charge-carrier collection during a laser-pulse-induced transient photocurrent process were obtained. Subsequently, the charge-carrier concentration-dependent mobility values were obtained, and they are discussed in consideration of the additional influences of the charge-carrier losses from the device during the charge-carrier extraction that also affects the photocurrent-trace shape.

关键词： charge-carrier photogeneration     transient photocurrent     polymer solar cells     charge-carrier extraction     space charge-limited current    

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标题 作者 时间 类型 操作

Plasma enhanced chemical vapor deposition of excellent a-Si:H passivation layers for a-Si:H/c-Si heterojunctionsolar cells at high pressure and high power

Lei ZHAO,Wenbin ZHANG,Jingwei CHEN,Hongwei DIAO,Qi WANG,Wenjing WANG

期刊论文

Analysis of the double-layer α-Si:H emitter with different doping concentrations for α-Si:H/c-Si heterojunctionsolar cells

Haibin HUANG,Gangyu TIAN,Tao WANG,Chao GAO,Jiren YUAN,Zhihao YUE,Lang ZHOU

期刊论文

An industrial solution to light-induced degradation of crystalline silicon solar cells

Meng XIE,Changrui REN,Liming FU,Xiaodong QIU,Xuegong YU,Deren YANG

期刊论文

Ultrathin microcrystalline hydrogenated Si/Ge alloyed tandem solar cells towards full solar spectrum

Yu Cao, Xinyun Zhu, Xingyu Tong, Jing Zhou, Jian Ni, Jianjun Zhang, Jinbo Pang

期刊论文

Plated contacts for solar cells with superior adhesion strength to screen printed solar cells

WENHAM,C. CHONG

期刊论文

Enhanced charge extraction for all-inorganic perovskite solar cells by graphene oxide quantum dots modified

期刊论文

phosphonic acid anchoring groups aiming toward enhancing the stability and efficiency of mesoscopic solarcells

期刊论文

A state-of-the-art review of solar passive building system for heating or cooling purpose

Arun Kumar NANDA,C K PANIGRAHI

期刊论文

Enhancement of open circuit voltage in organic solar cells by doping a fluorescent red dye

Qing LI, Junsheng YU, Yue ZANG, Nana WANG, Yadong JIANG

期刊论文

Ga(X)N/Si nanoarchitecture: An emerging semiconductor platform for sunlight-powered water splitting toward

期刊论文

Design and analysis of Salisbury screens and Jaumann absorbers for solar radiation absorption

Xing FANG, C. Y. ZHAO, Hua BAO

期刊论文

Special issue: Technologies for future high-efficiency industrial silicon wafer solar cells

期刊论文

High-quality industrial n-type silicon wafers with an efficiency of over 23% for Si heterojunction solarcells

Fanying MENG,Jinning LIU,Leilei SHEN,Jianhua SHI,Anjun HAN,Liping ZHANG,Yucheng LIU,Jian YU,Junkai ZHANG,Rui ZHOU,Zhengxin LIU

期刊论文

POCl3 diffusion for industrial Si solar cell emitter formation

Hongzhao LI,Kyung KIM,Brett HALLAM,Bram HOEX,Stuart WENHAM,Malcolm ABBOTT

期刊论文

Charge-carrier photogeneration and extraction dynamics of polymer solar cells probed by a transient photocurrent

Boa Jin, Hyunmin Park, Yang Liu, Leijing Liu, Jongdeok An, Wenjing Tian, Chan Im

期刊论文